AMAG nanometro
AMAG7 GI-SAXS Striplet, Hardmask LineSpace 70 nm depth, L40P100 anchor target
AMAG7 GI-SAXS Striplet, Hardmask LineSpace 70 nm depth, L40P100 anchor target
AMAG7E Striplet LineSpace GI-SAXS gratings etched into 70 nm SiO2 on Si, terminating on Si substrate. Anchor target is L40P100. Large space free of competing periodic content between 2 x 1 mm gratings ensures pure GI-SAXS signal from single structure.
| Wafer | 300 mm standard, 200 mm option available |
| Process | AMAG7, GI-SAXS L40P100 LineSpace chiplet, 70 nm depth |
| Stack | 70 nm SiO2 on Si, lines etched in SiO2, terminate on Si substrate |
| Depth | 70 nm |
| Pattern | AMAG7E LineSpace GI-SAXS chiplet, 59 die, 26x33mm repeat distance |
| Anchor target | L40P100 |
| Imaged targets | L40P100, 5 sites among dual 2 x 1 mm gratings |
| CD, Anchor Target | Bottom CD: ~40 nm |
| Reference metrology |
Anchor target: CD measurements & images, all sites/wafer. |
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